The use of wide-bandgap components and the challenges of qualification are increasing exponentially. SiC and GaN power semiconductors introduce new failure effects, resulting in additional testing challenges. Dynamic tests such as DGS, dynamic H3TRB, or DRB are closer to the real application. These tests help to detect faults like drifts at an early stage before the component goes into series production and causes recalls. However, they also offer new challenges in concrete implementation. Scaling these tests for larger batches and accurately capturing failure mechanisms to develop effective models remains challenging. We provide the latest test methods and guidance on their implementation for component testing and qualification to ensure the safety and reliability of your power semiconductor devices.