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Reliability Test of Wide-Bandgap Power Semiconductors

New testing methods tailored to specific applications are necessary for wide-bandgap power semiconductors made of silicon carbide (SiC) and gallium nitride (GaN), as traditional tests fail to identify certain novel failure effects. As they have an influence on the real application, this qualification gap is closed by dynamic high humidity high temperature reverse bias (H3TRB) or dynamic reverse bias (DRB) according to the definition of AQG 324.

NI SET Dynamic H3TRB and DRB Power Semiconductor Test Systems

In a setting with a constant temperature and humidity, the DUT is exposed to dynamic drain stimuli with high voltage peaks with a fast rise of voltage. The voltage shifts lead to fast changes of the magnetic field, which have an impact on corrosion. The procedure accelerates the deterioration of the DUT and possibly also the insulation materials and is the closest to the real-life operational conditions of the DUT.

 

This test is a prerequisite to make solid statements about the lifetime of SiC and GaN discrete components or modules. Key parameter of dynamic H3TRB/AC-HTC/DRB test system:

 

  • Accommodates up to 240 DUT channels per system, with Vds and maximum drain voltage up to 1500 V
  • Enables single DUT features including leakage current measurement, overcurrent protection, and voltage control
  • Supports both DUT-active and DUT-passive testing modes, along with a fully automated test procedure
  • Offers configurable output frequency from 0 Hz to 500 kHz and duty cycle settings from 25 percent to 75 percent in five percent increments
  • Operates under environmental conditions up to 85 °C and 85 percent relative humidity, with optional tests like AC-HTC available

Solution Advantages

  • Enhanced testing conditions incorporate additional temperature and humidity cycles into the dynamic stress assessment

  • The flexibility to quickly cover changing requirements

  • Unique reliability compliance specifically meets the solar industry’s reliability requirements, which are not covered by other tests

  • Optional AC-HTC test variant is tailored for special application scenarios

Power Semiconductor Rollercoaster: DRB (Dynamic Reverse Bias)

Wide-Bandgap Reliability Testing Challenges

In this video, NI’s Gabriel Lieser focuses on DRB, a reliability test for wide-bandgap devices. Learn about the two ways of performing this reliability test for SiC and GaN components and what needs to be considered when setting up and performing the test.

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