PXIe-5840 Specifications

Definitions

Warranted specifications describe the performance of a model under stated operating conditions and are covered by the model warranty.

Characteristics describe values that are relevant to the use of the model under stated operating conditions but are not covered by the model warranty.

  • Typical specifications describe the performance met by a majority of models.
  • Typical-95 specifications describe the performance met by 95% (≈2σ) of models with a 95% confidence.
  • Nominal specifications describe an attribute that is based on design, conformance testing, or supplemental testing.

Specifications are Warranted unless otherwise noted.

Conditions

Warranted specifications are valid under the following conditions unless otherwise noted.

  • Over ambient temperature range of 0 °C to 45 °C.
  • 30 minutes warm-up time.
  • Calibration cycle is maintained.
  • Chassis fan speed is set to High. In addition, NI recommends using slot blockers and EMC filler panels in empty module slots to minimize temperature drift.
  • Calibration IP is used properly during the creation of custom FPGA bitfiles.

Typical specifications do not include measurement uncertainty and are measured immediately after a device self-calibration is performed.

Unless otherwise noted, specifications assume the PXIe-5840 is configured in the following default mode of operation:

  • Reference Clock source: Internal
  • RF IN reference level: 0 dBm
  • RF IN preamplifier: AUTO
  • RF OUT power level: 0 dBm
  • LO tuning mode: Fractional
  • LO PLL loop bandwidth: Low
  • LO step size: 500 kHz
  • LO frequency: 2.4 GHz
  • LO source: Internal
Note Within the specifications, self-calibration °C refers to the recorded device temperature of the last successful self-calibration. You can read the self-calibration temperature from the device using the appropriate software functions.

Frequency

The following characteristics are common to both RF IN and RF OUT ports.

Frequency range

9 kHz to 6 GHz

Table 1. PXIe-5840 Bandwidth
Center Frequency Instantaneous Bandwidth
9 kHz to <120 MHz<120 MHz
120 MHz to 410 MHz50 MHz
>410 MHz to 650 MHz100 MHz
>650 MHz to 1.3 GHz200 MHz
>1.3 GHz to 2.2 GHz500 MHz
>2.2 GHz to 6 GHz1 GHz
The PXIe-5840 uses the low frequency subsystem to directly acquire or generate the RF signal below 120 MHz.

Tuning resolution[1]

888 nHz

LO step size

Fractional mode

Programmable step size, 500 kHz default

Integer mode[2]

LO ≤ 4 GHz

10 MHz, 25 MHz, 50 MHz, 100 MHz

LO > 4 GHz

20 MHz, 50 MHz, 100 MHz, 200 MHz

Frequency Settling Time

Table 2. Maximum Frequency Settling Time
Settling Time Maximum Time (ms)
≤1 × 10-6 of final frequency 0.38
≤0.1 × 10-6 of final frequency 0.40

This specification includes only frequency settling and excludes any residual amplitude settling.

Internal Frequency Reference

Initial adjustment accuracy

±200 × 10 -9

Temperature stability

±1 × 10 -6, maximum

Aging

±1 × 10 -6 per year, maximum

Accuracy

Initial adjustment accuracy ± Aging ± Temperature stability

Note For more information about using an external frequency reference or sharing the internal frequency reference, refer to the REF IN and REF OUT sections.

Spectral Purity

Table 3. Single Sideband Phase Noise
Frequency Phase Noise (dBc/Hz, Single Sideband), 20 kHz Offset, Self-Calibration °C ± 10 °C
<3 GHz -102
3 GHz to 4 GHz -102
>4 GHz to 6 GHz -96
Figure 1. Measured Phase Noise[3] at 900 MHz, 2.4 GHz, and 5.8 GHz

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RF Input

RF Input Amplitude Range

Table 4. Input Amplitude Range
Center Frequency Preamp RF Input (dB)
9 kHz to <120 MHz Disabled Average noise level to +15 dBm (CW RMS)
Auto
120 MHz to 6 GHz Disabled Average noise level to +30 dBm (CW RMS)
Auto
Enabled Average noise level to -10 dBm (CW RMS)

RF gain resolution

1 dB, nominal

Table 5. Input RF Analog Gain Range, Preamp Auto, Nominal
Center Frequency RF Analog Gain Range (dB)
10 MHz to <120 MHz ≥35
120 MHz to 500 MHz ≥65
>500 MHz to 1.5 GHz ≥65
>1.5 GHz to 2.3 GHz ≥60
>2.3 GHz to 2.9 GHz ≥60
>2.9 GHz to 4.8 GHz ≥55
>4.8 GHz to 6 GHz ≥50
Table 6. Input RF Analog Gain Range, Preamp Enabled, Nominal
Center Frequency RF Analog Gain Range (dB)
120 MHz to 500 MHz ≥40
>500 MHz to 1.5 GHz ≥35
>1.5 GHz to 2.3 GHz ≥30
>2.3 GHz to 2.9 GHz ≥30
>2.9 GHz to 4.8 GHz ≥25
>4.8 GHz to 6 GHz ≥25

RF Input Amplitude Settling Time[4]

<0.5 dB of final value

40 μs, typical

<0.1 dB of final value

70 μs, typical

RF Input Absolute Amplitude Accuracy

Table 7. Input Absolute Amplitude Accuracy (dB)
Center Frequency Specification Typical
10 MHz to <120 MHz ±0.75 ±0.55 ±0.35
120 MHz to 500 MHz ±0.80 ±0.65 ±0.50
>500 MHz to 1.5 GHz ±0.70 ±0.55 ±0.40
>1.5 GHz to 2.3 GHz ±0.75 ±0.60 ±0.45
>2.3 GHz to 2.9 GHz ±0.65 ±0.50 ±0.35
>2.9 GHz to 4.8 GHz ±0.75 ±0.55 ±0.40
>4.8 GHz to 6 GHz ±0.90 ±0.60 ±0.45

Conditions: Reference level -30 dBm to +30 dBm; measured at 3.75 MHz offset from the configured center frequency; measurement performed after the PXIe-5840 has settled. Preamplifier mode set to automatic.

This specification is valid only when the module is operating within the specified ambient temperature range and within ±10 °C from the last self-calibration temperature, as measured with the onboard temperature sensors.

RF Input Frequency Response

Table 8. Input Frequency Response (dB), Equalized
Center Frequency NI-RFSA Device Instantaneous Bandwidth Frequency Response (dB)
≥250 MHz to 410 MHz 50 MHz ±0.90
±0.50, typical
>410 MHz to 650 MHz 100 MHz ±0.75
±0.50, typical
>650 MHz to 1.5 GHz 200 MHz ±1.00
±0.65, typical
>1.5 GHz to 2.2 GHz 200 MHz ±1.30
±0.70, typical
>2.2 GHz to 2.9 GHz 200 MHz ±1.00
±0.55, typical
1 GHz ±1.80, typical
>2.9 GHz to 4.8 GHz 200 MHz ±1.00
±0.65, typical
1 GHz ±2.00, typical
>4.8 GHz to 6 GHz 200 MHz ±1.00
±0.65, typical
1 GHz ±1.65, typical

Conditions: Reference level -30 dBm to +30 dBm; module temperature within ± 5 °C of last self-calibration temperature.

Frequency response is defined as the maximum relative amplitude deviation from the reference offset frequency. For the PXIe-5840 RF Input the reference offset frequency is 3.75 MHz. For the absolute amplitude accuracy at the reference offset, refer to the RF Input Absolute Amplitude Accuracy section.

Figure 2. Measured 200 MHz Input Frequency Response, 0 dBm Reference Level, Equalized

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Figure 3. Measured 1 GHz Input Frequency Response, 0 dBm Reference Level, Equalized

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RF Input Average Noise Density

Table 9. Input Average Noise Density (dBm/Hz), Typical
Frequency Range -50 dBm Reference Level -10 dBm Reference Level
>120 MHz to 500 MHz -161 -140
>500 MHz to 3.4 GHz -164 -150
>3.4 GHz to 4.5 GHz -163 -148
>4.5 GHz to 6.0 GHz -161 -149
Conditions: Input terminated with a 50 Ω load; 50 averages; noise integrated and normalized to 1 Hz bandwidth. The -50 dBm reference level configuration has the preamplifier enabled for high sensitivity. The -10 dBm reference level configuration has the preamplifier disabled for optimized linearity.

RF Input Spurious Responses

RF Input Third-Order Input Intermodulation

Table 10. Third-Order Input Intercept Point (IIP3), -5 dBm Reference Level, Typical
Frequency Range IIP3 (dBm)
120 MHz to 600 MHz 23
>600 MHz to 1.4 GHz 20
>1.4 GHz to 4.0 GHz 22
>4.0 GHz to 5.1 GHz 19
>5.1 GHz to 6.0 GHz 16

Conditions: Two -10 dBm tones, 700 kHz separation at RF IN; preamp disabled; reference level: -5 dBm.

Table 11. Third-Order Input Intercept Point (IIP3), -20 dBm Reference Level, Typical
Frequency Range IIP3 (dBm)
120 MHz to 200 MHz 5
>200 MHz to 4.0 GHz 9
>4.0 GHz to 5.1 GHz 4
5.1 GHz to 6.0 GHz 1

Conditions: Two -25 dBm tones, 700 kHz separation at RF IN; preamp enabled; reference level: -20 dBm.

RF Input Nonharmonic Spurs

Table 12. Input Nonharmonic Spurs (dBc), Typical
LO Frequency 10 kHz ≤ Offset < 100 kHz 100 kHz ≤ Offset < 1 MHz 1 MHz ≤ Offset[5]
>120 MHz to 410 MHz -65 -64 -60
>410 MHz to 750 MHz -65 -65 -66
>750 MHz to 2.2 GHz -63 -63 -72
>2.2 GHz to 4.5 GHz -57 -60 -68
>4.5 GHz to 6 GHz -49 -50 -63
Conditions: Reference level 0 dBm. Preamp disabled. Measured with a single tone, -6 dBr, where dBr is referenced to the configured RF reference level.
Note Offset refers to ± desired signal offset (Hz) around the current LO frequency.

RF Input LO Residual Power

Table 13. Input LO Residual Power (dBr[6]), Typical
Center Frequency Reference Level
-30 dBm to -20 dBm -20 dBm to +30 dBm
≥120 MHz to 410 MHz -42 -42
>410 MHz to 2.2 GHz -47 -60
>2.2 GHz to 4 GHz -55 -57
>4 GHz to 6 GHz -45 -48

Conditions: LO Residual Power averaged across a maximum of 200 MHz bandwidth using the internal LO of the PXIe-5840. Input tone power at a maximum of -6 dBr.

The PXIe-5840 uses the low frequency subsystem to directly acquire the RF input signal below 120 MHz.

Figure 4. Input LO Residual Power, Typical

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RF Input Residual Sideband Image

Table 14. Input Residual Sideband Image (dBc), Typical
Center Frequency NI-RFSA Device Instantaneous Bandwidth Setting Input Bandwidth[7] Residual Sideband Image (dBc)
≥120 MHz to 410 MHz 50 MHz 50 MHz -50
>410 MHz to 650 MHz 100 MHz 100 MHz -50
>650 MHz to 1.3 GHz 200 MHz 200 MHz -55
>1.3 GHz to 2.2 GHz 200 MHz 200 MHz -55
500 MHz 200 MHz -55
500 MHz -53
>2.2 GHz to 5 GHz 200 MHz 200 MHz -57
1 GHz 200 MHz -50
1 GHz -45
>5 GHz to 6 GHz 200 MHz 200 MHz -50
1 GHz 200 MHz -50
1 GHz -45

Conditions: Reference levels -30 dBm to +30 dBm.

The PXIe-5840 uses the low frequency subsystem to directly acquire the RF signal below 120 MHz.

This specification describes the maximum residual sideband image within the device bandwidth centered around a given RF center frequency.

Figure 5. Input Residual Sideband Image,0 dBm Reference Level, Measured

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Figure 6. Input Residual Sideband Image, -30 dBm Reference Level, Measured

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RF Output

RF Output Power Range

Table 15. Output Power Range
NI-RFSG Bandwidth Setting Frequency Power Range, CW, Average Power
Specification Nominal
<120 MHz 9 kHz to <120 MHz Noise floor to +5 dBm Noise Floor to +8 dBm
≤200 MHz 120 MHz to 4 GHz Noise floor to +18 dBm Noise Floor to ≥+20 dBm
>4 GHz to 6 GHz Noise Floor to +15 dBm Noise Floor to ≥+17 dBm
1 GHz ≥2.2 GHz to 4 GHz Noise Floor to +18 dBm Noise Floor to ≥+20 dBm
>4 GHz to 6 GHz Noise Floor to +10 dBm Noise Floor to ≥+15 dBm
The power range refers to CW average power. For modulated signal generation, it is important to consider the impact of peak to average power ratio (PAPR). For example, a modulated 20 MHz signal between 120 MHz to 4 GHz with a 12 dB PAPR can be generated with up to +6 dBm (+8 dBm nominal) average modulated power.

Output attenuator resolution

1 dB, nominal

Digital attenuation resolution[8]

<0.1 dB

Figure 7. Output Maximum CW Average Power (dB), Measured

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RF Output Amplitude Settling Time[9]

<0.5 dB of final value

60 μs, typical

<0.1 dB of final value

85 μs, typical

RF Output Power Level Accuracy

Table 16. Output Power Level Accuracy (dB)
Center Frequency Specification Typical
>200 MHz to 500 MHz ±0.8 ±0.6 ±0.45
>500 MHz to 1.5 GHz ±0.7 ±0.6 ±0.45
>1.5 GHz to 2.3 GHz ±0.7 ±0.6 ±0.45
>2.3 GHz to 2.9 GHz ±0.7 ±0.6 ±0.45
>2.9 GHz to 4.8 GHz ±0.85 ±0.65 ±0.5
>4.8 GHz to 6 GHz ±0.9 ±0.7 ±0.55

Conditions: For frequencies 2.3 GHz and below, Power Level -30 dBm to +15 dBm; for frequencies greater than 2.3 GHz, Power Level -50 dBm to +15 dBm; measured at 3.75 MHz offset from the configured center frequency; measurement performed after the PXIe-5840 has settled.

This specification is valid only when the module is operating within the specified ambient temperature range and within ±10 °C from the last self-calibration temperature, as measured with the onboard temperature sensors.

This specification requires that temperature correction is being performed. Temperature correction is applied automatically if NIRFSG_ATTR_AUTOMATIC_THERMAL_CORRECTION is enabled (default). Temperature correction is applied if necessary only when NI-RFSG settings are adjusted. If NIRFSG_ATTR_AUTOMATIC_THERMAL_CORRECTION is disabled, the niRFSG_PerformThermalCorrection must be explicitly called.

Figure 8. Output Relative Power Accuracy, 10 MHz to <120 MHz, -50 dBm to +5 dBm, Nominal[10]

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Figure 9. Output Relative Power Accuracy, 120 MHz to 6 GHz, -50 dBm to +15 dBm, Nominal[10]

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RF Output Frequency Response

Table 17. Output Frequency Response (dB) (Equalized)
Center Frequency NI-RFSG Signal Bandwidth Setting Frequency Response (dB)
≥250 MHz to 410 MHz 50 MHz ±0.90
±0.55, typical
>410 MHz to 650 MHz 100 MHz ±1.10
±0.55, typical
>650 MHz to 1.5 GHz 200 MHz ±2.00
±1.20, typical
>1.5 GHz to 2.2 GHz 200 MHz ±1.40
±0.80, typical
>2.2 GHz to 2.9 GHz 200 MHz ±1.40
±0.80, typical
1 GHz ±2.00, typical
>2.9 GHz to 4.8 GHz 200 MHz ±2.20
±1.20, typical
1 GHz ±3.3, typical
>4.8 GHz to 6 GHz 200 MHz ±2.20
±1.25, typical
1 GHz ±3.00, typical

Conditions: Output peak power level -30 dBm to +15 dBm; module temperature within ±5 °C of last self-calibration temperature.

Frequency response is defined as the maximum relative amplitude deviation from the reference offset frequency. For the PXIe-5840 RF Input the reference offset frequency is 3.75 MHz. For the absolute amplitude accuracy at the reference offset, refer to the RF Output Power Level Accuracy section.

Figure 10. Measured 200 MHz Output Frequency Response, 0 dBm Output Power Level, Equalized

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Figure 11. Measured 1 GHz Output Frequency Response, 0 dBm Output Power Level, Equalized

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RF Output Average Noise Density

Table 18. Output Average Noise Density (dBm/Hz), Typical
Center Frequency Output Power Level (Peak)
-30 dBm 0 dBm 10 dBm
10 MHz to 120 MHz -145 -147
>120 MHz to 600 MHz -167 -149 -137
>600 MHz to 2.2 GHz -165 -151 -140
>2.2 GHz to 3.0 GHz -165 -143 -134
>3.0 GHz to 5.0 GHz -164 -148 -138
>5.0 GHz to 6.0 GHz -163 -142 -133
Conditions: 50 averages; -40 dB baseband signal attenuation; noise measurement frequency offset 4 MHz relative to output frequency.

RF Output Spurious Responses

RF Output Third-Order Intermodulation

Table 19. Third-Order Output Intermodulation Distortion (IMD3) (dBc), -6 dBm Tones, Typical
Fundamental Frequency Baseband DAC: -2 dBFS Baseband DAC: -6 dBFS
1 MHz to 100 MHz -72 -72
>100 MHz to 2.0 GHz -45 -50
>2.0 GHz to 2.7 GHz -49 -54
>2.7 GHz to 4.0 GHz -46 -59
>4.0 GHz to 5.0 GHz -42 -59
>5.0 GHz to 6.0 GHz -50 -56

Conditions: -6 dBm tones with 700 kHz separation at RF OUT. Output power level set to achieve the desired output power per tone allowing specified digital headroom.

Table 20. Third-Order Output Intermodulation Distortion (IMD3) (dBc), -36 dBm Tones, Typical
Fundamental Frequency Baseband DAC: -2 dBFS Baseband DAC: -6 dBFS
1 MHz to 100 MHz -71 -72
>100 MHz to 1.0 GHz -52 -60
>1.0 GHz to 2.7 GHz -56 -64
>2.7 GHz to 5.0 GHz -54 -60
>5.0 GHz to 6.0 GHz -53 -57
Conditions: -36 dBm tones with 700 kHz separation at RF OUT. Output power level set to achieve the desired output power per tone allowing specified digital headroom.

RF Output Harmonics

Table 21. Output Second Harmonic Level (dBc), Typical
CW Average Power
Frequency Range 6 dBm 15 dBm
10 MHz to 120 MHz -50 N/A
>120 MHz to 200 MHz -34 -32
>200 MHz to 1.4 GHz -34 -32
>1.4 GHz to 2.7 GHz -30 -32
>2.7 GHz to 6.0 GHz -39 -32
Conditions: Measured using a -1 dBFS baseband signal with 1 MHz offset.

RF Output Nonharmonic Spurs

Table 22. Output Nonharmonic Spurs (dBc), Typical
Frequency 10 kHz ≤ Offset < 100 kHz 100 kHz ≤ Offset < 1 MHz 1 MHz ≤ Offset[11]
>120 MHz to 460 MHz <-80 <-80 <-60
>460 MHz to 1.35 GHz <-75 <-75 <-65
>1.35 GHz to 2.25 GHz <-75 <-70 <-63
>2.25 GHz to 4.5 GHz <-65 <-63 <-62
>4.5 GHz to 6 GHz <-55 <-56 <-61
Conditions : Output full scale level 0 dBm. Measured with a single tone at 0 dBFS.
Note Offset refers to ± desired signal offset (Hz) around the current LO frequency.

RF Output LO Residual Power

Table 23. Output LO Residual Power (dBc), Typical
Center Frequency LO Residual Power
≥120 MHz to 410 MHz -50
>410 MHz to 2.2 GHz -52
>2.2 GHz to 4 GHz -54
>4 GHz to 6 GHz -51

Conditions: LO Residual Power averaged across a maximum of 200 MHz bandwidth using the internal LO of the PXIe-5840. Peak output power -30 dBm to +15 dBm; tone at -6 dBFS.

The PXIe-5840 uses the low frequency subsystem to directly generate the RF signal below 120 MHz.

Figure 12. Output LO Residual Power, Typical

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RF Output Residual Sideband Image

Table 24. Output Residual Sideband Image (dBc), Typical
Center Frequency NI-RFSG Signal Bandwidth Setting Output Bandwidth[12] Residual Sideband Image
≥120 MHz to 410 MHz 50 MHz 50 MHz -40
>410 MHz to 650 MHz 100 MHz 100 MHz -55
>650 MHz to 1.3 GHz 200 MHz 200 MHz -48
>1.3 GHz to 2.2 GHz 200 MHz 200 MHz -50
500 MHz 200 MHz -47
500 MHz -45
>2.2 GHz to 5 GHz 200 MHz 200 MHz -50
1 GHz 200 MHz -48
1 GHz -45
>5 GHz to 6 GHz 200 MHz 200 MHz -45
1 GHz 200 MHz -45
1 GHz [13] -40

Conditions: Peak output power levels -30 dBm to +15 dBm.

The PXIe-5840 uses the low frequency subsystem to directly generate the RF signal below 120 MHz.

This specification describes the maximum residual sideband image within the device bandwidth centered around a given RF center frequency.

Figure 13. Output Residual Sideband Image, 0 dBm Average Output Power, Measured

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Figure 14. Output Residual Sideband Image, -30 dBm Average Output Power, Measured

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Error Vector Magnitude (EVM)

Table 25. Error Vector Magnitude, RMS (dB), Typical
Center Frequency RF Input RF Output
350 MHz to 4 GHz -41 -41
>4 GHz to 6 GHz -40 -40

Conditions: 20 MHz bandwidth 64-QAM modulated signal. Pulse-shape filtering: root-raised cosine, alpha=0.25; PXIe-5840 RF Input reference level: 0 dBm, LO Offset: 10 MHz; PXIe-5840 RF Output average power level: -5 dBm; Reference Clock source: Onboard; Acquisition length: 300 µs.

Figure 15. Measured RMS EVM[14]

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Application-Specific Modulation Quality

WLAN 802.11ax

Figure 16. WLAN 802.11ax Measured RMS EVM (dB) versus Frequency (Hz), External LO[15]

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Figure 17. WLAN 802.11ax Measured RMS EVM (dB) versus Measured Average Power (dBm), External LO[16]

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Figure 18. WLAN 802.11ax Measured RMS EVM (dB) versus Frequency (Hz), Internal LO[17]

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Figure 19. WLAN 802.11ax Measured RMS EVM (dB) versus Measured Average Power (dBm), Internal LO[18]

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WLAN 802.11ac

Figure 20. WLAN 802.11ac Measured RMS EVM (dB) versus Frequency (Hz), 80 MHz Bandwidth[19]

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Figure 21. WLAN 802.11ac Measured RMS EVM (dB) versus Frequency (Hz), 160 MHz Bandwidth[20]

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LTE

Figure 22. LTE Measured RMS EVM (dB) versus Frequency (Hz)[21]

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WCDMA

Figure 23. WCDMA Measured RMS EVM (dB) versus Frequency (Hz)[22]

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Baseband Characteristics

Analog-to-digital converters (ADCs)

I/Q data rate[23]

19 kS/s to 1.25 GS/s

Digital-to-analog converters (DACs)

I/Q data rate[24]

19 kS/s to 1.25 GS/s

Onboard FPGA

FPGA

Xilinx Virtex-7 X690T

LUTs

433,200

Flip-flops

866,400

DSP48 slices

3,600

Embedded block RAM

52.9 Mbits

Data transfers

DMA, interrupts, programmed I/O

Number of DMA channels

56

Onboard DRAM

Memory size

2 banks, 2 GB per bank

Theoretical maximum data rate

12 GB/s per bank

Onboard SRAM

Memory size

2 MB

Maximum data rate (read)

31 MB/s

Maximum data rate (write)

29 MB/s

Front Panel I/O

Note Measurement Categories CAT I and CAT O (Other) are equivalent. These test and measurement circuits are not intended for direct connection to the MAINs building installations of Measurement Categories CAT II, CAT III, or CAT IV.

RF IN

Connector

SMA (female)

Input impedance

50 Ω, nominal, AC coupled

Maximum DC input voltage without damage

±10 VDC

Table 26. Absolute Maximum Input Power
<120 MHz +24 dBm (CW RMS)
≥120 MHz +33 dBm (CW RMS)

Input Return Loss (VSWR)

Table 27. Input Return Loss (dB) (Voltage Standing Wave Ratio), Typical
Frequency Preamp Disabled Preamp Enabled, Auto
100 kHz to <500 MHz 13.5 (1.51:1) 13.5 (1.51:1)
500 MHz to <1.2 GHz 15.0 (1.43:1) 13.5 (1.51:1)
1.2 GHz to <3.8 GHz 15.0 (1.43:1) 15.0 (1.43:1)
3.8 GHz to <4.2 GHz 15.0 (1.43:1) 13.5 (1.51:1)
4.2 GHz to <5.8 GHz 15.0 (1.43:1) 15.0 (1.43:1)
5.8 GHz to 6.0 GHz 13.5 (1.51:1) 13.5 (1.51:1)

RF OUT

Connector

SMA (female)

Output impedance

50 Ω, nominal, AC coupled

Table 28. Absolute Maximum Reverse Power
<120 MHz +24 dBm (CW RMS)
≥120 MHz +33 dBm (CW RMS)

Output Return Loss (VSWR)

Table 29. Output Return Loss (dB) (Voltage Standing Wave Ratio), Typical
Frequency Typical
100 kHz to <500 MHz 12.0 (1.67:1)
500 MHz to <2.8 GHz 17.0 (1.33:1)
2.8 GHz to <4.5 GHz 14.5 (1.46:1)
4.5 GHz to <5.8 GHz 16.0 (1.38:1)
5.8 GHz to 6.0 GHz 15.0 (1.43:1)

LO OUT (RF IN and RF OUT)

Connectors

MMPX (female)

Frequency range

120 MHz to 6 GHz

Output power

0 dBm ± 2 dB, typical

Output power resolution[25]

0.25 dB, nominal

Output impedance

50 Ω, nominal, AC coupled

Output return loss

120 MHz to 2 GHz

>15 dB (VSWR < 1.43:1), nominal

>2 GHz to 6 GHz

>12 dB (VSWR < 1.67:1), nominal

LO IN (RF IN and RF OUT)

Connectors

MMPX (female)

Frequency range

120 MHz to 6 GHz

Input power range[26]

-4 dBm to 0 dBm, nominal

Input impedance

50 Ω, nominal, AC coupled

Input return loss (LO IN Enabled)

120 MHz to 2 GHz

>20 dB (VSWR <1.22:1), nominal

>2 GHz to 6 GHz

>15 dB (VSWR <1.43:1), nominal

Input return loss (LO IN Disabled) 120 MHz to 6 GHz

>18 dB (VSWR <1.22:1), nominal

Absolute maximum input power

+15 dBm

Maximum DC voltage

±5 VDC

REF IN

Note Frequency Accuracy = Tolerance × Reference Frequency

Connector

MMPX (female)

Frequency

10 MHz

Tolerance

±10 × 10-6

Amplitude

0.7 Vpk-pk to 3.3 Vpk-pk into 50 Ω, typical.

Input impedance

50 Ω, nominal

Coupling

AC

Note Jitter performance improves with increased slew rate of input signal.

REF OUT

Connector

MMPX (female)

Frequency[27]

10 MHz, nominal

Amplitude

1.65 V pk-pk into 50 Ω, nominal

Output impedance

50 Ω, nominal

Coupling

AC

PFI 0

Connector

MMPX (female)

Input impedance

10 kΩ, nominal

Output impedance

50 Ω, nominal

Maximum DC drive strength

24 mA

Note Voltage levels are guaranteed by design through the digital buffer specifications.
Table 30. Voltage Levels
Absolute maximum input range -0.5 V to 5.5 V
VIL, maximum 0.8 V
VIH, minimum 2.0 V
VOL, maximum 0.2 V with 100 μA load
VOH, minimum 2.9 V with 100 μA load

DIGITAL I/O

Connector

Molex Nano-Pitch I/O

5.0 V Power

±5%, 50 mA maximum, nominal

Table 31. DIGITAL I/O Signal Characteristics
Signal Type Direction
MGT Tx± <3..0> Xilinx Virtex-7 GTH Output
MGT Rx± <3..0> Xilinx Virtex-7 GTH Input
MGT REF± Differential Input
DIO <1..0> Single-ended Bidirectional
DIO <7..2> Single-ended Bidirectional
5.0 V DC Output
GND Ground
Note DIO <1..0> pins are multiplexed with MGT REF±.

Digital I/O Single-Ended Channels

Number of channels

8

Signal type

Single-ended

Voltage families

3.3 V, 2.5 V, 1.8 V, 1.5 V, 1.2 V

Output impedance

50 Ω, nominal

Direction control

Per channel

Minimum required direction change latency

200 ns

Maximum output toggle rate

60 MHz with 100 μA load, nominal

Table 32. Input Impedance
DIO <1..0> 10 kΩ, nominal
DIO <7..2> 100 kΩ, nominal
Note Voltage levels are guaranteed by design through the digital buffer specifications.
Table 33. DIGITAL I/O Single-Ended DC Signal Characteristics
Voltage Family VIL Max VIH Min VOL Max

(100µA load)

VOH Min

(100µA load)

Maximum DC Drive Strength
3.3 V 0.8 V 2.0 V 0.2 V 3.0 V 24 mA
2.5 V 0.7 V 1.6 V 0.2 V 2.2 V 18 mA
1.8 V 0.62 V 1.29 V 0.2 V 1.5 V 16 mA
1.5 V 0.51 V 1.07 V 0.2 V 1.2 V 12 mA
1.2 V 0.42 V 0.87 V 0.2 V 0.9 V 6 mA

Digital I/O High Speed Serial MGT

Note For detailed FPGA and High Speed Serial Link specifications, refer to Xilinx documentation.

Data rate

500 Mbps to 12 Gbps, nominal

Number of Tx channels

4

Number of Rx channels

4

I/O AC coupling capacitor

100 nF

MGT Tx± <3..0> Channels

Minimum differential output voltage

800 mVpk-pk into 100 Ω, nominal

Conditions: transmitter output swing at maximum setting.

MGT Rx± <3..0> Channels
Table 34. Differential Input Voltage Range
≤6.6 GB/s 150 mVpk-pk to 2,000 mVpk-pk, nominal
>6.6 GB/s 150 mVpk-pk to 1,250 mVpk-pk, nominal

Differential input resistance

100 Ω, nominal

MGT Reference Clock
Note Internal MGT Reference is derived from the Sample Clock PLL. Available frequencies are 2.5 GHz / N, where 4 ≤ N ≤ 32. Set via MGT component level IP (CLIP).
Table 35. Clocking Resources
Data Clock 156.25 MHz
MGT REF± Input 60 MHz to 820 MHz, nominal
MGT REF± Input

AC coupling capacitors

100 nF

Differential input resistance

100 Ω, nominal

Differential input Vpk-pk range

350 mV to 2000 mV, nominal

Absolute maximum input range

-1.25 V to 4.5 V

Note Absolute maximum levels measured at input, prior to AC coupling capacitors.
Figure 24. DIGITAL I/O Nano-Pitch Connector

1378

Power Requirements

Table 36. Power Requirements
Voltage (VDC) Typical Current (A)
+3.3 3.3
+12 5.8

Power is 80 W, typical. Consumption is from both PXI Express backplane power connectors.

Conditions: Simultaneous generation and acquisition using NI-RFSG and NI-RFSA at 1.25 GS/s IQ rate, 45 °C ambient temperature. Power consumption depends on FPGA image being used.

Physical Characteristics

PXIe-5840 module

2U, two slot, PXI Express module 4.1 cm × 12.9 cm × 21.1 cm(1.6 in. × 5.6 in. × 8.3 in.)

Weight

794 g (28.0 oz)

Environment

Maximum altitude

2,000 m (800 mbar) (at 25 °C ambient temperature)

Pollution Degree

2

Indoor use only.

Operating Environment

Ambient temperature range

0 °C to 45 °C (Tested in accordance with IEC 60068-2-1 and IEC 60068-2-2. Meets MIL-PRF-28800FClass 3 low temperature limit and MIL-PRF-28800FClass 4 high temperature limit.)

Relative humidity range

10% to 90%, noncondensing (Tested in accordance with IEC 60068-2-56.)

Storage Environment

Ambient temperature range

-40 °C to 71 °C

Relative humidity range

5% to 95%, noncondensing

Shock and Vibration

Operating shock

30 g peak, half-sine, 11 ms pulse

Random vibration

Operating

5 Hz to 500 Hz, 0.3 grms

Nonoperating

5 Hz to 500 Hz, 2.4 grms

Compliance and Certifications

Safety Compliance Standards

This product is designed to meet the requirements of the following electrical equipment safety standards for measurement, control, and laboratory use:

  • IEC 61010-1, EN 61010-1
  • CAN/CSA-C22.2 No. 61010-1
Note For UL and other safety certifications, refer to the product label or the Product Certifications and Declarations section.

Electromagnetic Compatibility

This product meets the requirements of the following EMC standards for electrical equipment for measurement, control, and laboratory use:
  • EN 61326-1 (IEC 61326-1): Class A emissions; Basic immunity
  • EN 55011 (CISPR 11): Group 1, Class A emissions
  • AS/NZS CISPR 11: Group 1, Class A emissions
  • FCC 47 CFR Part 15B: Class A emissions
  • ICES-001: Class A emissions
Note In the United States (per FCC 47 CFR), Class A equipment is intended for use in commercial, light-industrial, and heavy-industrial locations. In Europe, Canada, Australia, and New Zealand (per CISPR 11), Class A equipment is intended for use only in heavy-industrial locations.
Note Group 1 equipment (per CISPR 11) is any industrial, scientific, or medical equipment that does not intentionally generate radio frequency energy for the treatment of material or inspection/analysis purposes.
Note For EMC declarations, certifications, and additional information, refer to the Product Certifications and Declarations section.

CE Compliance 1378

This product meets the essential requirements of applicable European Directives, as follows:

2014/30/EU; Electromagnetic Compatibility Directive (EMC)

Product Certifications and Declarations

Refer to the product Declaration of Conformity (DoC) for additional regulatory compliance information. To obtain product certifications and the DoC for NI products, visit ni.com/product-certifications, search by model number, and click the appropriate link.

Environmental Management

NI is committed to designing and manufacturing products in an environmentally responsible manner. NI recognizes that eliminating certain hazardous substances from our products is beneficial to the environment and to NI customers.

For additional environmental information, refer to the Engineering a Healthy Planet web page at ni.com/environment. This page contains the environmental regulations and directives with which NI complies, as well as other environmental information not included in this document.

EU and UK Customers

  • 1378 Waste Electrical and Electronic Equipment (WEEE)—At the end of the product life cycle, all NI products must be disposed of according to local laws and regulations. For more information about how to recycle NI products in your region, visit ni.com/environment/weee.
  • 电子信息产品污染控制管理办法(中国RoHS)

  • 1378 中国RoHSNI符合中国电子信息产品中限制使用某些有害物质指令(RoHS)。关于NI中国RoHS合规性信息,请登录 ni.com/environment/rohs_china。(For information about China RoHS compliance, go to ni.com/environment/rohs_china.)
  • 1 Tuning resolution combines LO step size capability and frequency shift DSP implemented on the FPGA.

    2 Larger step sizes in integer mode improves phase noise performance.

    3 Conditions: Measured Port: LO OUT; Reference Clock: internal, phase noise spurs not shown.

    4 Constant RF input signal, varying input reference level.

    5 The maximum offset is limited to within the equalized bandwidth of the referenced LO Frequency.

    6 dBr is relative to the full scale of the configured RF reference level.

    7 The Input Bandwidth describes the occupied bandwidth of the input signal centered at the center frequency.

    8 Average output power ≥ -100 dBm.

    9 Varying RF output power range.

    10 RF Front end configured to maximum +5 dBm (<120 MHz) and +15 dBm (120 MHz to 6 GHz). Signal level attenuated digitally.

    11 The maximum offset is limited to within the equalized bandwidth of the referenced LO Frequency.

    12 Output Bandwidth describes the occupied bandwidth of the generated signal centered at the center frequency.

    13 Image performance degrades for center frequencies greater than 5.9 GHz for reference levels above 0 dBm.

    14 Conditions: 20 MHz bandwidth 64-QAM modulated signal. Pulse-shape filtering: root-raised cosine, alpha=0.25; PXIe-5840 RF Input reference level: 0 dBm, LO Offset: 10 MHz; PXIe-5840 RF Output average power level: -5 dBm; Reference Clock source: Onboard; acquisition length: 300 µs.

    15 Conditions: RF Output loopback to RF Input; waveform bandwidth: 80 MHz; MCS Index: 11; 16 OFDM Symbols; 10 Packet Averages; LO Offset: -250 MHz; device instantaneous bandwidth: 1 GHz; RF Output power level: -15 dBm; External LO: PXIe-5653. Channel Estimation Method is Preamble.

    16 Conditions: RF Output loopback to RF Input; waveform bandwidth: 80 MHz; MCS Index: 11; LO Offset: -250 MHz; device instantaneous bandwidth: 1 GHz; External LO: PXIe-5653. Channel Estimation Method is Preamble.

    17 Conditions: RF Output loopback to RF Input; waveform bandwidth: 80 MHz; MCS Index: 11; LO Offset: -250 MHz; device instantaneous bandwidth: 1 GHz; RF Output power level: -15 dBm. Channel Estimation Method is Preamble.

    18 Conditions: RF Output loopback to RF Input; waveform bandwidth: 80 MHz; MCS index: 11; LO Offset: -250 MHz; device instantaneous bandwidth: 1 GHz; carrier frequency: 5.5 GHz.

    19 Conditions: RF Output loopback to RF Input; MCS Index: 9; 16 OFDM Symbols; 10 Packet Averages; LO Offset: -250 MHz; device instantaneous bandwidth: 500 MHz; RF Output power level: 0 dBm; Internal LO.

    20 Conditions: RF Output loopback to RF Input; MCS Index: 9; LO Offset: -250 MHz; device instantaneous bandwidth: 500 MHz; RF Output power level: 0 dBm; Internal LO.

    21 Conditions: RF Output loopback to RF Input; Single LTE channel; LO Leakage Avoidance disabled.

    22 Conditions: RF Output loopback to RF Input; Single WCDMA channel; LO Leakage Avoidance enabled

    23 I/Q data rates lower than 1.25 GS/s are achieved using fractional decimation.

    24 I/Q data rates lower than 1.25 GS/s are achieved using fractional interpolation.

    25 Output power resolution refers to the RF attenuator step size used to compensate for the LO output frequency response.

    26 The PXIe-5840 supports receiving an external LO with a range of signal power levels. To properly configure the PXIe-5840 LO signal path for the provided level, set NIRFSA_ATTR_LO_IN_POWER or NIRFSG_ATTR_LO_IN_POWER.

    27 Refer to the Internal Frequency Reference section for accuracy.