Vardan Aleksanyan, Project Integration LLC
Designing an automated test system for functional and parametric control of static and dynamic parameters of high-power IGBT and MOSFET transistors.
Using LabVIEW software and the NI PXI platform to create an automated test system to measure the parameters of high-power IGBT and MOSFET transistors with an easy-to-use and intuitive user interface.
Norayr Harutyunyan - Find this author in the NI Developer Community
Vardan Aleksanyan - Find this author in the NI Developer Community
Vahan Sahakyan - Find this author in the NI Developer Community
Project Integration, provides design, implementation, installation, and service for modern industrial measurement and automated test systems. The company’s qualified engineers use NI graphical system design technologies to design, prototype, and deploy solutions in the fields of automated testing and production management. They also offer a comprehensive approach to customer requirements.
Transistors are active components and used extensively in electronic circuits as amplifiers or switching devices. As amplifiers, they are used in high- and low-frequency stages, oscillators, modulators, detectors, and in any function-performing circuits. In digital circuits they are used as switches. It is fundamentally important to measure and test transistor parameters to ensure smooth performance.
We based the Test System for High-Power IBGT and MOSFET Transistors on the NI PXI platform and a third-party signal power amplifier. We also powered the system with software developed using the LabVIEW graphical programming environment. We significantly reduced the time needed to integrate the system with third-party equipment by using NI software and hardware platforms.
We designed our test system for:
We designed the measuring system software to measure static and dynamic parameters of the following devices:
The software allows us to:
The developed ATE system measures the following parameters:
Static and dynamic parameters of high-power MOSFET transistors
Static and dynamic parameters of high-power IGBT transistors
Vardan Aleksanyan
Find this author in the NI Developer Community